BUZ61 Datasheet and Replacement
Type Designator: BUZ61
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-220AB
BUZ61 substitution
BUZ61 Datasheet (PDF)
buz61.pdf

BUZ 61SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 61 400 V 12.5 A 0.4 TO-220 AB C67078-S1341-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 12.5Pulsed drain current IDpulsTC = 25 C 50Avalanche current,limited by Tjmax IA
buz61a.pdf

BUZ 61 ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 61 A 400 V 11 A 0.5 TO-220 AB C67078-S1341-A3Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 27 C 11Pulsed drain current IDpulsTC = 25 C 44Avalanche current,limited by Tjmax IA
Datasheet: BUZ40B , BUZ44A , BUZ45B , BUZ51 , BUZ53A , BUZ53C , BUZ54 , BUZ54A , 18N50 , BUZ61A , BUZ71S2 , BUZ72 , BUZ72AL , BUZ72L , BUZ73 , BUZ73A , BUZ73AL .
History: SLD65R950S2 | HAT1065R | STD9HN65M2 | STP1013 | DK64N90 | TPU65R600M | BSC010N04LSI
Keywords - BUZ61 MOSFET datasheet
BUZ61 cross reference
BUZ61 equivalent finder
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BUZ61 substitution
BUZ61 replacement
History: SLD65R950S2 | HAT1065R | STD9HN65M2 | STP1013 | DK64N90 | TPU65R600M | BSC010N04LSI



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