All MOSFET. BUZ84 Datasheet

 

BUZ84 Datasheet and Replacement


   Type Designator: BUZ84
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-3
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BUZ84 Datasheet (PDF)

 ..1. Size:130K  njs
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BUZ84

 ..2. Size:223K  inchange semiconductor
 buz84.pdf pdf_icon

BUZ84

isc N-Channel Mosfet Transistor BUZ84FEATURESStatic Drain-Source On-Resistance: R = 2.0(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers for

 0.1. Size:101K  njs
 buz84a.pdf pdf_icon

BUZ84

 0.2. Size:223K  inchange semiconductor
 buz84a.pdf pdf_icon

BUZ84

isc N-Channel Mosfet Transistor BUZ84AFEATURESStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)SOA is Power Dissipation LimitedHigh speed switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for applications such as switching regulators, switchingconverters, motor drivers,relay drivers and drivers fo

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History: FQA24N50F109 | IRFHM792PBF | BL10N70-A | AON6794 | CED05N8

Keywords - BUZ84 MOSFET datasheet

 BUZ84 cross reference
 BUZ84 equivalent finder
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