All MOSFET. C2M0160120D Datasheet

 

C2M0160120D Datasheet and Replacement


   Type Designator: C2M0160120D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 17.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.196 Ohm
   Package: TO-247-3
 

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C2M0160120D Datasheet (PDF)

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C2M0160120D

VDS 1200 VID(MAX) @ 25C 17.7 AC2M0160120D RDS(on) 160 m Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher Syst

Datasheet: BVSS123L , BVSS138L , BVSS84L , BW3402 , BWS2301 , BXL4004 , BXL4004-1E , C2M0080120D , IRF1405 , C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , CDM7-650 , CHM003TGP .

History: BUK127-50GT | P5102FMA | IRFM220BTFFP001 | HM3207T

Keywords - C2M0160120D MOSFET datasheet

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