C2M0160120D Specs and Replacement

Type Designator: C2M0160120D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 17.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.196 Ohm

Package: TO-247-3

C2M0160120D substitution

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C2M0160120D datasheet

 ..1. Size:679K  cree
 c2m0160120d.pdf pdf_icon

C2M0160120D

VDS 1200 V ID(MAX) @ 25 C 17.7 A C2M0160120D RDS(on) 160 m Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher Syst... See More ⇒

Detailed specifications: BVSS123L, BVSS138L, BVSS84L, BW3402, BWS2301, BXL4004, BXL4004-1E, C2M0080120D, IRF830, C2M1000170D, CAS100H12AM1, CCS050M12CM2, CCS5Y3315CM, CDM22010-650, CDM4-650, CDM7-650, CHM003TGP

Keywords - C2M0160120D MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs