CHM003TGP Specs and Replacement

Type Designator: CHM003TGP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: SOT-416

CHM003TGP substitution

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CHM003TGP datasheet

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CHM003TGP

CHENMKO ENTERPRISE CO.,LTD CHM003TGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 0.11 Ampere FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing density. SC-75/SOT-416 * Rugged and reliable. * High saturation current capability. * Voltage controlled small signa... See More ⇒

Detailed specifications: C2M0160120D, C2M1000170D, CAS100H12AM1, CCS050M12CM2, CCS5Y3315CM, CDM22010-650, CDM4-650, CDM7-650, MMIS60R580P, CHM02N6ANGP, CHM02N6GPAGP, CHM02N6PAGP, CHM02N7NGP, CHM02N7PAGP, CHM0410JGP, CHM04N6NGP, CHM05N65PAGP

Keywords - CHM003TGP MOSFET specs

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