All MOSFET. CHM003TGP Datasheet

 

CHM003TGP Datasheet and Replacement


   Type Designator: CHM003TGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT-416
 

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CHM003TGP Datasheet (PDF)

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CHM003TGP

CHENMKO ENTERPRISE CO.,LTDCHM003TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 0.11 AmpereFEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing density.SC-75/SOT-416* Rugged and reliable.* High saturation current capability.* Voltage controlled small signa

Datasheet: C2M0160120D , C2M1000170D , CAS100H12AM1 , CCS050M12CM2 , CCS5Y3315CM , CDM22010-650 , CDM4-650 , CDM7-650 , 2N7002 , CHM02N6ANGP , CHM02N6GPAGP , CHM02N6PAGP , CHM02N7NGP , CHM02N7PAGP , CHM0410JGP , CHM04N6NGP , CHM05N65PAGP .

History: SM6A22NSF | IPB120N08S4-03 | SQM90142E | CS65N20-30 | C3M0065100K | DMG8880LSS | IXFV110N10P

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