All MOSFET. CHM06N5NGP Datasheet

 

CHM06N5NGP Datasheet and Replacement


   Type Designator: CHM06N5NGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: D2PAK
 

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CHM06N5NGP Datasheet (PDF)

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CHM06N5NGP

CHENMKO ENTERPRISE CO.,LTDCHM06N5NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 500 Volts CURRENT 6.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(

Datasheet: CHM02N6GPAGP , CHM02N6PAGP , CHM02N7NGP , CHM02N7PAGP , CHM0410JGP , CHM04N6NGP , CHM05N65PAGP , CHM05P03NGP , IRF840 , CHM09N6NGP , CHM09N7NGP , CHM1012LPAGP , CHM1012PAGP , CHM1012TGP , CHM1013TGP , CHM1023VGP , CHM1024VGP .

History: SL150N03Q | CEB08N8 | TSF18N50MR | BUK9K18-40E | YJG90G10A | STN3414 | CS6N70F

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