All MOSFET. CHM06N5NGP Datasheet

 

CHM06N5NGP MOSFET. Datasheet pdf. Equivalent


   Type Designator: CHM06N5NGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 35 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: D2PAK

 CHM06N5NGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM06N5NGP Datasheet (PDF)

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 chm06n5ngp.pdf

CHM06N5NGP CHM06N5NGP

CHENMKO ENTERPRISE CO.,LTDCHM06N5NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 500 Volts CURRENT 6.6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2N6903JANTX

 

 
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