CHM06N5NGP MOSFET. Datasheet pdf. Equivalent
Type Designator: CHM06N5NGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 104 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 6.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 54 nC
Rise Time (tr): 35 nS
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: D2PAK
CHM06N5NGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CHM06N5NGP Datasheet (PDF)
1.1. chm06n5ngp.pdf 
Size:107K _update_mosfet
CHENMKO ENTERPRISE CO.,LTD CHM06N5NGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 500 Volts CURRENT 6.6 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small flat package. (D2PAK) 0.420(10.67) 0.190(4.83) * High density cell design for extremely low RDS(ON). 0.380(9.69) 0.160(
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
