CHM6607JGP Datasheet and Replacement
Type Designator: CHM6607JGP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
Package: SO-8
CHM6607JGP substitution
CHM6607JGP Datasheet (PDF)
chm6607jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6607JGPSURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High
chm6601jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6601JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 4.3 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
chm6601pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM6601PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 16 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* High density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Rugged a
Datasheet: CHM6426PAGP , CHM6426XGP , CHM6428JGP , CHM6503GP , CHM6561QGP , CHM65A3PAGP , CHM6601JGP , CHM6601PAGP , AO3400A , CHM6861JGP , CHM6861ZGP , CHM703ALPAGP , CHM7101JGP , CHM71A3PAGP , CHM72A3NGP , CHM72A3PAGP , CHM730GPAGP .
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