All MOSFET. CHM7101JGP Datasheet

 

CHM7101JGP MOSFET. Datasheet pdf. Equivalent


   Type Designator: CHM7101JGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.4 nC
   trⓘ - Rise Time: 3 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SO-8

 CHM7101JGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM7101JGP Datasheet (PDF)

 ..1. Size:90K  chenmko
 chm7101jgp.pdf

CHM7101JGP CHM7101JGP

CHENMKO ENTERPRISE CO.,LTDCHM7101JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and

 9.1. Size:108K  chenmko
 chm71a3pagp.pdf

CHM7101JGP CHM7101JGP

CHENMKO ENTERPRISE CO.,LTDCHM71A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 65 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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