All MOSFET. CHM72A3NGP Datasheet

 

CHM72A3NGP MOSFET. Datasheet pdf. Equivalent


   Type Designator: CHM72A3NGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 21 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: D2PAK

 CHM72A3NGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM72A3NGP Datasheet (PDF)

 ..1. Size:107K  chenmko
 chm72a3ngp.pdf

CHM72A3NGP CHM72A3NGP

CHENMKO ENTERPRISE CO.,LTDCHM72A3NGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 75 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small flat package. (D2PAK)0.420(10.67)0.190(4.83)* High density cell design for extremely low RDS(ON). 0.380(9.69)0.160(4.

 7.1. Size:108K  chenmko
 chm72a3pagp.pdf

CHM72A3NGP CHM72A3NGP

CHENMKO ENTERPRISE CO.,LTDCHM72A3PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 70 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

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