CHM8206JGP Datasheet and Replacement
Type Designator: CHM8206JGP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SO-8
CHM8206JGP substitution
CHM8206JGP Datasheet (PDF)
chm8206jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM8206JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and
chm8208jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM8208JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 7 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and
chm8207jgp.pdf

CHENMKO ENTERPRISE CO.,LTDCHM8207JGPSURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 6 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and
Datasheet: CHM7401WGP , CHM7402WGP , CHM7407WGP , CHM740ANGP , CHM75A3PAGP , CHM76139NGP , CHM8030LANGP , CHM80N75NGP , BS170 , CHM8207JGP , CHM8208JGP , CHM830GPAGP , CHM8311JGP , CHM83A3NGP , CHM83A3PAGP , CHM8401JGP , CHM8410JGP .
History: SDF9130JAB | ZVP2120GTC
Keywords - CHM8206JGP MOSFET datasheet
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History: SDF9130JAB | ZVP2120GTC



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