All MOSFET. CHM8809JGP Datasheet

 

CHM8809JGP MOSFET. Datasheet pdf. Equivalent


   Type Designator: CHM8809JGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 14 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: SO-8

 CHM8809JGP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CHM8809JGP Datasheet (PDF)

 ..1. Size:74K  chenmko
 chm8809jgp.pdf

CHM8809JGP CHM8809JGP

CHENMKO ENTERPRISE CO.,LTDCHM8809JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 15.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and re

 9.1. Size:64K  chenmko
 chm8811jgp.pdf

CHM8809JGP CHM8809JGP

CHENMKO ENTERPRISE CO.,LTDCHM8811JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High powe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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