All MOSFET. CHM8809JGP Datasheet

 

CHM8809JGP Datasheet and Replacement


   Type Designator: CHM8809JGP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 15.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   tr ⓘ - Rise Time: 14 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: SO-8
 

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CHM8809JGP Datasheet (PDF)

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CHM8809JGP

CHENMKO ENTERPRISE CO.,LTDCHM8809JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 15.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* High density cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* Rugged and re

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CHM8809JGP

CHENMKO ENTERPRISE CO.,LTDCHM8811JGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12.5 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High powe

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History: AM4362N | CSD18534Q5A

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