All MOSFET. CMLDM7484 Datasheet

 

CMLDM7484 Datasheet and Replacement


   Type Designator: CMLDM7484
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: SOT-563
 

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CMLDM7484 Datasheet (PDF)

 ..1. Size:587K  central
cmldm7484.pdf pdf_icon

CMLDM7484

CMLDM7484SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO

 8.1. Size:587K  central
cmldm7585.pdf pdf_icon

CMLDM7484

CMLDM7585SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO

 8.2. Size:665K  central
cmldm7005.pdf pdf_icon

CMLDM7484

CMLDM7005CMLDM7005Rwww.centralsemi.comSURFACE MOUNTDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices are SILICON MOSFETdual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi

 8.3. Size:713K  central
cmldm7003t.pdf pdf_icon

CMLDM7484

CMLDM7003TGSURFACE MOUNT SILICONwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEMOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV.MARKIN

Datasheet: CMLDM7003 , CMLDM7003E , CMLDM7003J , CMLDM7003JE , CMLDM7003TG , CMLDM7005 , CMLDM7120G , CMLDM7120T , AON6380 , CMLDM7585 , CMLDM8002A , CMLDM8002AG , CMLDM8002AJ , CMLDM8005 , CMLDM8120 , CMLDM8120T , CMLM0205 .

History: AFN3606S | DCCF016M120G3 | FDS2070N3 | PA910BM | BSL302SN | BRCS30N02DP | AFN1304

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