CMLDM7484 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CMLDM7484
Маркировка: 8C7
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 0.35 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 0.45 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 0.792 nC
Выходная емкость (Cd): 15 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.46 Ohm
Тип корпуса: SOT-563
CMLDM7484 Datasheet (PDF)
cmldm7484.pdf
CMLDM7484SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7484 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO
cmldm7585.pdf
CMLDM7585SURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7585 COMPLEMENTARY MOSFETSconsists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage.MARKING CO
cmldm7005.pdf
CMLDM7005CMLDM7005Rwww.centralsemi.comSURFACE MOUNTDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThese CENTRAL SEMICONDUCTOR devices are SILICON MOSFETdual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. The CMLDM7005R utilizes a reverse pinout confi
cmldm7003t.pdf
CMLDM7003TGSURFACE MOUNT SILICONwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEMOSFET The CENTRAL SEMICONDUCTOR CMLDM7003TG is a dual N-Channel enhancement-mode MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This device offers low rDS(ON), low VGS(th), and ESD protection up to 2kV.MARKIN
cmldm7002a cmldm7002a cmldm7002aj.pdf
CMLDM7002ACMLDM7002AG*CMLDM7002AJwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices are ENHANCEMENT-MODESILICON MOSFET dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7002A utilizes the USA pinout co
cmldm7003e cmldm7003je.pdf
CMLDM7003ECMLDM7003JEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThe CENTRAL SEMICONDUCTOR CMLDM7003E ENHANCEMENT-MODEand CMLDM7003JE are Enhancement-mode SILICON MOSFETN-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003E uti
cmldm7120 cmldm7120g.pdf
CMLDM7120GSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7120G SILICON MOSFETis an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: C7
cmldm7003 cmldm7003 cmldm7003j.pdf
CMLDM7003CMLDM7003G*CMLDM7003Jwww.centralsemi.comSURFACE MOUNTDESCRIPTION:DUAL N-CHANNELThese CENTRAL SEMICONDUCTOR devices ENHANCEMENT-MODEare dual Enhancement-mode N-Channel Field Effect SILICON MOSFETTransistors, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. The CMLDM7003 utilizes the USA pinout confi
cmldm7120t.pdf
CMLDM7120TGSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMLDM7120TG MOSFETis an enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and a MAX threshold voltage of 0.85V.MARKING CODE: CT7F
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