CMNDM7001 Specs and Replacement

Type Designator: CMNDM7001

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 9.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SOT-953

CMNDM7001 substitution

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CMNDM7001 datasheet

 ..1. Size:423K  central
 cmndm7001.pdf pdf_icon

CMNDM7001

CMNDM7001 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMNDM7001 is SILICON MOSFET an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE AC FEATURES ... See More ⇒

 9.1. Size:424K  central
 cmndm8001.pdf pdf_icon

CMNDM7001

CMNDM8001 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMNDM8001 is SILICON MOSFET a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE BC FEATURES ... See More ⇒

Detailed specifications: CMLM0305, CMLM0305T, CMLM0574, CMLM0575, CMLM0584, CMLM0585, CMLM0708A, CMLM8205, K2611, CMNDM8001, CMPDM202PH, CMPDM203NH, CMPDM302PH, CMPDM303NH, CMPDM7002A, CMPDM7002AE, CMPDM7002AG

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