CMNDM8001 Datasheet and Replacement
Type Designator: CMNDM8001
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT-953
CMNDM8001 substitution
CMNDM8001 Datasheet (PDF)
cmndm8001.pdf

CMNDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMNDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: BCFEATURES:
cmndm7001.pdf

CMNDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMNDM7001 is SILICON MOSFETan N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: ACFEATURES:
Datasheet: CMLM0305T , CMLM0574 , CMLM0575 , CMLM0584 , CMLM0585 , CMLM0708A , CMLM8205 , CMNDM7001 , 2SK3918 , CMPDM202PH , CMPDM203NH , CMPDM302PH , CMPDM303NH , CMPDM7002A , CMPDM7002AE , CMPDM7002AG , CMPDM7002AHC .
History: BSC084P03NS3G | PHD82NQ03LT | 2SK1446 | SVF2N60CNF | BUK9624-55A
Keywords - CMNDM8001 MOSFET datasheet
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History: BSC084P03NS3G | PHD82NQ03LT | 2SK1446 | SVF2N60CNF | BUK9624-55A



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