All MOSFET. CMNDM8001 Datasheet

 

CMNDM8001 Datasheet and Replacement


   Type Designator: CMNDM8001
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT-953
 

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CMNDM8001 Datasheet (PDF)

 ..1. Size:424K  central
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CMNDM8001

CMNDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMNDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: BCFEATURES:

 9.1. Size:423K  central
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CMNDM8001

CMNDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMNDM7001 is SILICON MOSFETan N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: ACFEATURES:

Datasheet: CMLM0305T , CMLM0574 , CMLM0575 , CMLM0584 , CMLM0585 , CMLM0708A , CMLM8205 , CMNDM7001 , 2SK3918 , CMPDM202PH , CMPDM203NH , CMPDM302PH , CMPDM303NH , CMPDM7002A , CMPDM7002AE , CMPDM7002AG , CMPDM7002AHC .

History: 2SK3597-01

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