CMNDM8001 Specs and Replacement
Type Designator: CMNDM8001
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT-953
CMNDM8001 substitution
- MOSFET ⓘ Cross-Reference Search
CMNDM8001 datasheet
cmndm8001.pdf
CMNDM8001 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMNDM8001 is SILICON MOSFET a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE BC FEATURES ... See More ⇒
cmndm7001.pdf
CMNDM7001 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CMNDM7001 is SILICON MOSFET an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE AC FEATURES ... See More ⇒
Detailed specifications: CMLM0305T, CMLM0574, CMLM0575, CMLM0584, CMLM0585, CMLM0708A, CMLM8205, CMNDM7001, EMB04N03H, CMPDM202PH, CMPDM203NH, CMPDM302PH, CMPDM303NH, CMPDM7002A, CMPDM7002AE, CMPDM7002AG, CMPDM7002AHC
Keywords - CMNDM8001 MOSFET specs
CMNDM8001 cross reference
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CMNDM8001 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: CMPDM202PH | 2SK1377 | QM04N60F | 2N6770 | 2N6782JANTXV | 2N6781LCC4
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