All MOSFET. CMNDM8001 Datasheet

 

CMNDM8001 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CMNDM8001
   Marking Code: BC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.658 nC
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT-953

 CMNDM8001 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMNDM8001 Datasheet (PDF)

 ..1. Size:424K  central
 cmndm8001.pdf

CMNDM8001 CMNDM8001

CMNDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMNDM8001 is SILICON MOSFETa P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: BCFEATURES:

 9.1. Size:423K  central
 cmndm7001.pdf

CMNDM8001 CMNDM8001

CMNDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMNDM7001 is SILICON MOSFETan N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING CODE: ACFEATURES:

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SVS5N70MJ | 2SK533 | CHM72A3NGP | TPCA8054-H | NCE65TF130F | NCE65T1K2I | BRFL20N65

 

 
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