All MOSFET. CMPDM8120 Datasheet

 

CMPDM8120 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CMPDM8120
   Marking Code: C8120
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.86 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm
   Package: SOT-23

 CMPDM8120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CMPDM8120 Datasheet (PDF)

 ..1. Size:325K  central
 cmpdm8120.pdf

CMPDM8120 CMPDM8120

CMPDM8120SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM8120 is SILICON MOSFETan Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: C812

 8.1. Size:324K  central
 cmpdm8002a.pdf

CMPDM8120 CMPDM8120

CMPDM8002ASURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM8002A SILICON MOSFETis an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802AFEATURES:SOT-23 CASE Low rDS(ON) Low VDS(O

 9.1. Size:343K  central
 cmpdm202ph.pdf

CMPDM8120 CMPDM8120

CMPDM202PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

 9.2. Size:326K  central
 cmpdm7002a cmpdm7002a cmpdm7002ag.pdf

CMPDM8120 CMPDM8120

CMPDM7002ACMPDM7002AG*www.centralsemi.comSURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7002A SILICON MOSFETand CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special de

 9.3. Size:323K  central
 cmpdm7003.pdf

CMPDM8120 CMPDM8120

CMPDM7003SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7003 is SILICON MOSFETan Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and ESD protection up to 2kV.MARKING CODE: C

 9.4. Size:348K  central
 cmpdm303nh.pdf

CMPDM8120 CMPDM8120

CMPDM303NHSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM303NH SILICON MOSFETis a high current N-Channel enhancement-mode silicon MOSFET, manufactured by the N-Channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold volta

 9.5. Size:343K  central
 cmpdm203nh.pdf

CMPDM8120 CMPDM8120

CMPDM203NHSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM203NH SILICON MOSFETis a High Current N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

 9.6. Size:343K  central
 cmpdm302ph.pdf

CMPDM8120 CMPDM8120

CMPDM302PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM302PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta

 9.7. Size:785K  central
 cmpdm7002ae.pdf

CMPDM8120 CMPDM8120

CMPDM7002AEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNT SILICONN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7002AE MOSFETis a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications.MARKING CODE: C702ESOT-23 CASEFEATURES:ESD protection up to 18

 9.8. Size:327K  central
 cmpdm7120 cmpdm7120g.pdf

CMPDM8120 CMPDM8120

CMPDM7120GSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7120G SILICON MOSFETis an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: C7

 9.9. Size:379K  central
 cmpdm7002ahc.pdf

CMPDM8120 CMPDM8120

CMPDM7002AHCSURFACE MOUNTwww.centralsemi.comN-CHANNELENHANCEMENT-MODEDESCRIPTION:SILICON MOSFETThe CENTRAL SEMICONDUCTOR CMPDM7002AHCis a High Current version of the 2N7002A Enhancement-mode N-Channel MOSFET, designed for high speed pulsed amplifier and driver applications.MARKING CODE: 702H SOT-23 CASE Device is Halogen Free by design FEATURES: ESD Protectio

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