CMPDM8120 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: CMPDM8120
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.86 A
Tjⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 60 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.142 Ohm
Тип корпуса: SOT-23
- подбор MOSFET транзистора по параметрам
CMPDM8120 Datasheet (PDF)
cmpdm8120.pdf

CMPDM8120SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM8120 is SILICON MOSFETan Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: C812
cmpdm8002a.pdf

CMPDM8002ASURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM8002A SILICON MOSFETis an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. MARKING CODE: C802AFEATURES:SOT-23 CASE Low rDS(ON) Low VDS(O
cmpdm202ph.pdf

CMPDM202PHSURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM202PH SILICON MOSFETis a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Volta
cmpdm7002a cmpdm7002a cmpdm7002ag.pdf

CMPDM7002ACMPDM7002AG*www.centralsemi.comSURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMPDM7002A SILICON MOSFETand CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special de
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History: 2SJ608 | P0908ATF | 2SK2424 | 2SK4108 | JCS2N60MB | CM20N50P | AP9997GP-HF
History: 2SJ608 | P0908ATF | 2SK2424 | 2SK4108 | JCS2N60MB | CM20N50P | AP9997GP-HF



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