All MOSFET. CMUDM8001 Datasheet

 

CMUDM8001 Datasheet and Replacement


   Type Designator: CMUDM8001
   Marking Code: C8A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 0.658 nC
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT-523
 

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CMUDM8001 Datasheet (PDF)

 ..1. Size:341K  central
 cmudm8001.pdf pdf_icon

CMUDM8001

CMUDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8001 SILICON MOSFETis a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: C8AFEATURES:

 6.1. Size:394K  central
 cmudm8004.pdf pdf_icon

CMUDM8001

CMUDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8004 SILICON MOSFETis an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING CODE: 84CSOT-523 CASEFEA

 6.2. Size:393K  central
 cmudm8005.pdf pdf_icon

CMUDM8001

CMUDM8005SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8005 SILICON MOSFETis an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: 5C8FEATURES:SOT-52

 9.1. Size:622K  central
 cmudm7590.pdf pdf_icon

CMUDM8001

TMCMUDM3590 N-CHCentralCMUDM7590 P-CHSemiconductor Corp.SURFACE MOUNTDESCRIPTION:N-CHANNEL AND P-CHANNELThe CENTRAL SEMICONDUCTOR CMUDM3590 ENHANCEMENT-MODEand CMUDM7590 are complementary N-Channel COMPLEMENTARY MOSFETSand P-Channel Enhancement-mode silicon MOSFETsdesigned for high speed pulsed amplifier and driverapplications. These devices offer desirable MOSFETe

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - CMUDM8001 MOSFET datasheet

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