Справочник MOSFET. CMUDM8001

 

CMUDM8001 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CMUDM8001
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 15 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 8 Ohm
   Тип корпуса: SOT-523

 Аналог (замена) для CMUDM8001

 

 

CMUDM8001 Datasheet (PDF)

 ..1. Size:341K  central
 cmudm8001.pdf

CMUDM8001 CMUDM8001

CMUDM8001SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8001 SILICON MOSFETis a P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: C8AFEATURES:

 6.1. Size:394K  central
 cmudm8004.pdf

CMUDM8001 CMUDM8001

CMUDM8004SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8004 SILICON MOSFETis an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING CODE: 84CSOT-523 CASEFEA

 6.2. Size:393K  central
 cmudm8005.pdf

CMUDM8001 CMUDM8001

CMUDM8005SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM8005 SILICON MOSFETis an Enhancement-mode P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: 5C8FEATURES:SOT-52

 9.1. Size:622K  central
 cmudm7590.pdf

CMUDM8001 CMUDM8001

TMCMUDM3590 N-CHCentralCMUDM7590 P-CHSemiconductor Corp.SURFACE MOUNTDESCRIPTION:N-CHANNEL AND P-CHANNELThe CENTRAL SEMICONDUCTOR CMUDM3590 ENHANCEMENT-MODEand CMUDM7590 are complementary N-Channel COMPLEMENTARY MOSFETSand P-Channel Enhancement-mode silicon MOSFETsdesigned for high speed pulsed amplifier and driverapplications. These devices offer desirable MOSFETe

 9.2. Size:341K  central
 cmudm7001.pdf

CMUDM8001 CMUDM8001

CMUDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7001 SILICON MOSFETis an N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: C7AFEATURES:

 9.3. Size:392K  central
 cmudm7004.pdf

CMUDM8001 CMUDM8001

CMUDM7004SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7004 SILICON MOSFETis an Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage.MARKING CODE: 74CFEATURES:SOT-52

 9.4. Size:392K  central
 cmudm7005.pdf

CMUDM8001 CMUDM8001

CMUDM7005SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CMUDM7005 SILICON MOSFETis an Enhancement-mode N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: 5C7FEATURES:SOT-52

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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