CS100N03B4 Specs and Replacement

Type Designator: CS100N03B4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO-252

CS100N03B4 substitution

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CS100N03B4 datasheet

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CS100N03B4

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist... See More ⇒

 5.1. Size:809K  blue-rocket-elect
 brcs100n03bd.pdf pdf_icon

CS100N03B4

BRCS100N03BD Rev.B May.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices ar... See More ⇒

 5.2. Size:819K  wuxi china
 cs100n03b8.pdf pdf_icon

CS100N03B4

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist... See More ⇒

 6.1. Size:730K  crhj
 cs100n03 b4.pdf pdf_icon

CS100N03B4

Silicon N-Channel Power MOSFET R CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

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Detailed specifications: CP640, CP643, CP650, CP651, CP664, CP665, CP666, CS04CN10, K4145, CS1010, CS1010EA8, CS10J60A4-G, CS10N60A8HD, CS10N60F, CS10N60FA9HD, CS10N65A8HD, CS10N65FA9HD

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