CS100N03B4
MOSFET. Datasheet pdf. Equivalent
Type Designator: CS100N03B4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 68
nC
trⓘ - Rise Time: 65
nS
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053
Ohm
Package:
TO-252
CS100N03B4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS100N03B4
Datasheet (PDF)
..1. Size:828K wuxi china
cs100n03b4.pdf 
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist
5.1. Size:809K blue-rocket-elect
brcs100n03bd.pdf
BRCS100N03BD Rev.B May.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices ar
5.2. Size:819K wuxi china
cs100n03b8.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist
6.1. Size:730K crhj
cs100n03 b4.pdf
Silicon N-Channel Power MOSFET R CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
6.2. Size:719K crhj
cs100n03f b9.pdf
Silicon N-Channel Power MOSFET R CS100N03F B9 General Description VDSS 30 V CS100N03F B9, the silicon N-channel Enhanced ID 100 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
6.3. Size:721K crhj
cs100n03 b8.pdf
Silicon N-Channel Power MOSFET R CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
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