CS10N70FA9D MOSFET Datasheet: N-Ch, 700V, 10A. Full specification with pinout and replacement list

CS10N70FA9D Specs and Replacement

Type Designator: CS10N70FA9D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220F

CS10N70FA9D substitution

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CS10N70FA9D datasheet

..1. Size:224K wuxi china
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Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou... See More ⇒

4.1. Size:387K wuxi china
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Silicon N-Channel Power MOSFET R CS10N70F A9R General Description VDSS 700 V CS10N70F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

6.1. Size:2011K jilin sino
jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf pdf_icon

N R N-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE... See More ⇒

6.2. Size:2289K jilin sino
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