CS120 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS120
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-220
CS120 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS120 Datasheet (PDF)
cs120.pdf
CSE120 N PD TC=25 14 W 0.11 W/ ID VGS=10V,TC=25 4.5 A ID VGS=10V,TC=100 3.0 A IDM 18 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 9.1 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=3.0A 0.30 RDS on
brcs120p012zj.pdf
BRCS120P012ZJ Rev.B Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -12V ID = -8 A (VGS = 10V) HF Product. / Applications Power
brcs120n03ya.pdf
BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features VDS (V) = 30V ID =24A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications Intendedforuseing
brcs120p04zc.pdf
BRCS120P04ZC Rev.A Jul.-2022 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; H
brcs120p03yb.pdf
BRCS120P03YB Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN33A-8L Plastic Package. / Features VDS (V) = -30V ID =-35 A (VGS = 20V) RDS(ON)@10V12mR(Typ.10mR) HFProduct. / Applications DC/DC
brcs120n02zj.pdf
BRCS120N02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8 A (VGS = 20V) HF Product. / Applications DC/DC
brcs120n03zj.pdf
BRCS120N03ZJRev.B Sep.-2020 DATA SHEET / DescriptionsDFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / FeaturesV (V) = 30VDSI = 8 A (V = 20V)D GSHF Product. / ApplicationsDC/DC
brcs120n03zb.pdf
BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HF Product. / Applications
brcs120n06ha.pdf
BRCS120N06HA Rev.A Nov.-2018 DATA SHEET / Descriptions TO-247 N N-CHANNEL MOSFET in a TO-247Plastic Package. / Features Low gate charge minimize switching loss and fast recovery body diode.HF Product. / Applications DC/DC
brcs120p03zc.pdf
BRCS120P03ZC Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN56 P P-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applica
brcs120n02lzj.pdf
BRCS120N02LZJ Rev.C Nov.-2021 DATA SHEET / Descriptions DFN22B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN22B-6LPlastic Package. / Features VDS (V) =20V ID = 8 A (VGS =12V) HF Product. / Applications DC/DC
brcs120n03dp.pdf
BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DSI =42A (V = 20V) D GS RDS(ON)@10V12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su
brcs120n03yb.pdf
BRCS120N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =20 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications DC/DC
brcs120n06yb.pdf
BRCS120N06YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 60V ID =24 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11.5mR) HFProduct. / Applications DC/DC
brcs120p04dp.pdf
BRCS120P04DP Rev.A Aug.-2022 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching,HF Product. / Applications DC/DC Power Management of Industrial DC/DC Converter.
brcs120p04yb.pdf
BRCS120P04YB Rev.A Dec.-2022 DATA SHEET / Descriptions PDFN 33A-8L P MOS P-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features V (V) = -40V DSI =-41A (V = 20V) D GS RDS(ON)@-10V13.5mR(Typ.11.6mR) HF Product. / Applications
brcs120n06sra.pdf
BRCS120N06SRA Rev.A Apr.-2023 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching,HF Product. DS(on) rss / Applications
brcs120n06sym.pdf
BRCS120N06SYM Rev.A May.-2022 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=60V ID=24.5A RDS(ON)
brcs120p012mc.pdf
BRCS120P012MC Rev.A Sep.-2020 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -12V ID = -6 A (VGS = 10V) HF Product. / Applications Power Management in Notebook computer, Portable Eq
brcs120n10szc.pdf
BRCS120N10SZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance, H
cs120nf10.pdf
CS120NF10 N PD TC=25 312 W ID VGS=10V,TC=25 65 A IDM 480 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.48 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=60A 0.02 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V
cs120a.pdf
CS120A N PD TC=25 14 W 0.11 W/ ID VGS=10V,TC=25 3.8 A ID VGS=10V,TC=100 2.4 A IDM 15.2 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 8.9 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=4.0A 0.23
cs120n08a8.pdf
Silicon N-Channel Power MOSFET R CS120N08 A8 General Description VDSS 85 V CS120N08 A8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25) 208 W VDMOSFETs, is obtained by advanced Trench Technology RDS(ON)Typ 6 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ca
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
