CS120. Аналоги и основные параметры
Наименование производителя: CS120
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 14 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: TO-220
Аналог (замена) для CS120
- подборⓘ MOSFET транзистора по параметрам
CS120 даташит
0.1. Size:643K blue-rocket-elect
brcs120p012zj.pdf 
BRCS120P012ZJ Rev.B Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = -12V ID = -8 A (VGS = 10V) HF Product. / Applications Power
0.2. Size:1299K blue-rocket-elect
brcs120n03ya.pdf 
BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN3 3-8L N MOS Double N-CHANNEL MOSFET in a PDFN3 3-8L Plastic Package. / Features VDS (V) = 30V ID =24A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications Intended for use in g
0.3. Size:1550K blue-rocket-elect
brcs120p04zc.pdf 
BRCS120P04ZC Rev.A Jul.-2022 DATA SHEET / Descriptions PDFN5 6 P P-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance; H
0.5. Size:576K blue-rocket-elect
brcs120n02zj.pdf 
BRCS120N02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8 A (VGS = 20V) HF Product. / Applications DC/DC
0.7. Size:769K blue-rocket-elect
brcs120n03zb.pdf 
BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications
0.8. Size:1011K blue-rocket-elect
brcs120n06ha.pdf 
BRCS120N06HA Rev.A Nov.-2018 DATA SHEET / Descriptions TO-247 N N-CHANNEL MOSFET in a TO-247 Plastic Package. / Features Low gate charge minimize switching loss and fast recovery body diode.HF Product. / Applications DC/DC
0.9. Size:1263K blue-rocket-elect
brcs120p03zc.pdf 
BRCS120P03ZC Rev.A Dec.-2021 DATA SHEET / Descriptions PDFN5 6 P P-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. / Applica
0.11. Size:1747K blue-rocket-elect
brcs120n03dp.pdf 
BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DS I =42A (V = 20V) D GS R DS(ON)@10V 12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su
0.14. Size:1059K blue-rocket-elect
brcs120p04dp.pdf 
BRCS120P04DP Rev.A Aug.-2022 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching,HF Product. / Applications DC/DC Power Management of Industrial DC/DC Converter.
0.17. Size:1271K blue-rocket-elect
brcs120n06sym.pdf 
BRCS120N06SYM Rev.A May.-2022 DATA SHEET / Descriptions PDFN5 6A N Dual N-CHANNEL MOSFET in a PDFN5 6A Plastic Package. / Features Dual N-Ch VDS(V)=60V ID=24.5A RDS(ON)
0.18. Size:683K blue-rocket-elect
brcs120p012mc.pdf 
BRCS120P012MC Rev.A Sep.-2020 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -12V ID = -6 A (VGS = 10V) HF Product. / Applications Power Management in Notebook computer, Portable Eq
0.19. Size:1112K blue-rocket-elect
brcs120n10szc.pdf 
BRCS120N10SZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance, H
0.20. Size:110K china
cs120nf10.pdf 
CS120NF10 N PD TC=25 312 W ID VGS=10V,TC=25 65 A IDM 480 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.48 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=60A 0.02 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V
0.21. Size:110K china
cs120a.pdf 
CS120A N PD TC=25 14 W 0.11 W/ ID VGS=10V,TC=25 3.8 A ID VGS=10V,TC=100 2.4 A IDM 15.2 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 8.9 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=4.0A 0.23
0.22. Size:529K wuxi china
cs120n08a8.pdf 
Silicon N-Channel Power MOSFET R CS120N08 A8 General Description VDSS 85 V CS120N08 A8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25 ) 208 W VDMOSFETs, is obtained by advanced Trench Technology RDS(ON)Typ 6 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ca
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