CS120NF10 Specs and Replacement
Type Designator: CS120NF10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 312 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO-263
- MOSFET ⓘ Cross-Reference Search
CS120NF10 datasheet
..1. Size:110K china
cs120nf10.pdf 
CS120NF10 N PD TC=25 312 W ID VGS=10V,TC=25 65 A IDM 480 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.48 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=60A 0.02 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V ... See More ⇒
8.1. Size:1299K blue-rocket-elect
brcs120n03ya.pdf 
BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN3 3-8L N MOS Double N-CHANNEL MOSFET in a PDFN3 3-8L Plastic Package. / Features VDS (V) = 30V ID =24A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications Intended for use in g... See More ⇒
8.2. Size:576K blue-rocket-elect
brcs120n02zj.pdf 
BRCS120N02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8 A (VGS = 20V) HF Product. / Applications DC/DC ... See More ⇒
8.4. Size:769K blue-rocket-elect
brcs120n03zb.pdf 
BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS = 20V) RDS(ON)@10V 13mR(Typ.11mR) HF Product. / Applications ... See More ⇒
8.5. Size:1011K blue-rocket-elect
brcs120n06ha.pdf 
BRCS120N06HA Rev.A Nov.-2018 DATA SHEET / Descriptions TO-247 N N-CHANNEL MOSFET in a TO-247 Plastic Package. / Features Low gate charge minimize switching loss and fast recovery body diode.HF Product. / Applications DC/DC ... See More ⇒
8.7. Size:1747K blue-rocket-elect
brcs120n03dp.pdf 
BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DS I =42A (V = 20V) D GS R DS(ON)@10V 12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su... See More ⇒
8.11. Size:1271K blue-rocket-elect
brcs120n06sym.pdf 
BRCS120N06SYM Rev.A May.-2022 DATA SHEET / Descriptions PDFN5 6A N Dual N-CHANNEL MOSFET in a PDFN5 6A Plastic Package. / Features Dual N-Ch VDS(V)=60V ID=24.5A RDS(ON)... See More ⇒
8.12. Size:1112K blue-rocket-elect
brcs120n10szc.pdf 
BRCS120N10SZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance, H... See More ⇒
8.13. Size:529K wuxi china
cs120n08a8.pdf 
Silicon N-Channel Power MOSFET R CS120N08 A8 General Description VDSS 85 V CS120N08 A8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25 ) 208 W VDMOSFETs, is obtained by advanced Trench Technology RDS(ON)Typ 6 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ca... See More ⇒
Detailed specifications: CS10N70FA9D, CS10N80A8D, CS10N80FA9D, CS110N03A3, CS1119, CS11P40, CS120, CS120A, IRFP250, CS123, CS12N10, CS12N60, CS12N60A8H, CS12N60A8HD, CS12N60F, CS12N60FA9H, CS12N60FA9HD
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.