CS123 Specs and Replacement
Type Designator: CS123
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT-23
CS123 substitution
- MOSFET ⓘ Cross-Reference Search
CS123 datasheet
cs123.pdf
CS123 N ( PD Ta=25 225 mW 1.8 mW/ ID VGS=10V,TA=25 0.17 A IDM 0.68 A VGS 20 V Tjm +150 Tstg -55 +150 RthJa 556 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=0.1A 6 ... See More ⇒
Detailed specifications: CS10N80A8D, CS10N80FA9D, CS110N03A3, CS1119, CS11P40, CS120, CS120A, CS120NF10, IRF1407, CS12N10, CS12N60, CS12N60A8H, CS12N60A8HD, CS12N60F, CS12N60FA9H, CS12N60FA9HD, CS12N65A8H
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