All MOSFET. CS19N40AN Datasheet

 

CS19N40AN Datasheet and Replacement


   Type Designator: CS19N40AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 276 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-3P
 

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CS19N40AN Datasheet (PDF)

 ..1. Size:438K  wuxi china
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CS19N40AN

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 6.1. Size:426K  wuxi china
 cs19n40a8h.pdf pdf_icon

CS19N40AN

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.1. Size:426K  crhj
 cs19n40 a8h.pdf pdf_icon

CS19N40AN

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:438K  crhj
 cs19n40 an.pdf pdf_icon

CS19N40AN

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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Datasheet: CS1405 , CS140N10A , CS150 , CS150N03A8 , CS150N04A8 , CS15N60 , CS16N60A8H , CS19N40A8H , RU7088R , CS1N50A1 , CS1N60A1H , CS1N60A3H , CS1N60B1R , CS1N60B3R , CS1N60C1H , CS1N60C3H , CS1N60F .

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