Справочник MOSFET. CS19N40AN

 

CS19N40AN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS19N40AN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 76 ns
   Cossⓘ - Выходная емкость: 276 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: TO-3P
     - подбор MOSFET транзистора по параметрам

 

CS19N40AN Datasheet (PDF)

 ..1. Size:438K  wuxi china
 cs19n40an.pdf pdf_icon

CS19N40AN

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 6.1. Size:426K  wuxi china
 cs19n40a8h.pdf pdf_icon

CS19N40AN

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.1. Size:426K  crhj
 cs19n40 a8h.pdf pdf_icon

CS19N40AN

Silicon N-Channel Power MOSFET R CS19N40 A8H VDSS 400 V General Description ID 19 A CS19N40 A8H the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.2. Size:438K  crhj
 cs19n40 an.pdf pdf_icon

CS19N40AN

Silicon N-Channel Power MOSFET R CS19N40 AN VDSS 400 V General Description ID 19 A CS19N40 AN, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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History: IRFS130 | MTN50N06E3 | SM3116NAF | SFB063N80AC3 | IPI051N15N5 | SSFT4004 | CPC3730

 

 
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