All MOSFET. CS1N65B1 Datasheet

 

CS1N65B1 Datasheet and Replacement


   Type Designator: CS1N65B1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 0.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.3 nC
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.5 Ohm
   Package: TO-92
 

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CS1N65B1 Datasheet (PDF)

 ..1. Size:546K  wuxi china
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CS1N65B1

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.1. Size:525K  wuxi china
 cs1n65b3.pdf pdf_icon

CS1N65B1

Silicon N-Channel Power MOSFET R CS1N65 B3 General Description VDSS 650 V CS1N65 B3, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:540K  crhj
 cs1n65 a1.pdf pdf_icon

CS1N65B1

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:546K  crhj
 cs1n65 b1.pdf pdf_icon

CS1N65B1

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

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Keywords - CS1N65B1 MOSFET datasheet

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