CS1N65B1 - аналоги и даташиты транзистора

 

CS1N65B1 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: CS1N65B1
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.5 ns
   Cossⓘ - Выходная емкость: 17 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 9.5 Ohm
   Тип корпуса: TO-92
 

 Аналог (замена) для CS1N65B1

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS1N65B1 Datasheet (PDF)

 ..1. Size:546K  wuxi china
 cs1n65b1.pdf pdf_icon

CS1N65B1

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 7.1. Size:525K  wuxi china
 cs1n65b3.pdf pdf_icon

CS1N65B1

Silicon N-Channel Power MOSFET R CS1N65 B3 General Description VDSS 650 V CS1N65 B3, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:540K  crhj
 cs1n65 a1.pdf pdf_icon

CS1N65B1

Silicon N-Channel Power MOSFET R CS1N65 A1 General Description VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 13.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:546K  crhj
 cs1n65 b1.pdf pdf_icon

CS1N65B1

Silicon N-Channel Power MOSFET R CS1N65 B1 General Description VDSS 650 V CS1N65 B1, the silicon N-channel Enhanced ID 1.5 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CS1N60A3H , CS1N60B1R , CS1N60B3R , CS1N60C1H , CS1N60C3H , CS1N60F , CS1N65A1 , CS1N65A3 , HY1906P , CS1N65B3 , CS1N70A3H-G , CS1N80 , CS1N80A1H , CS1N80A3H , CS1N80A4H , CS20N03D , CS20N50A8H .

History: ME95N03T | MEE3710-G | SST310 | R6025FNZ

 

 
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