All MOSFET. CS1N80A1H Datasheet

 

CS1N80A1H Datasheet and Replacement


   Type Designator: CS1N80A1H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: TO-92
 

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CS1N80A1H Datasheet (PDF)

 ..1. Size:536K  wuxi china
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CS1N80A1H

Silicon N-Channel Power MOSFET R CS1N80 A1H General Description VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.1. Size:410K  wuxi china
 cs1n80a3h.pdf pdf_icon

CS1N80A1H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.2. Size:523K  wuxi china
 cs1n80a4h.pdf pdf_icon

CS1N80A1H

Silicon N-Channel Power MOSFET R CS1N80 A4H General Description VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:410K  crhj
 cs1n80 a3h.pdf pdf_icon

CS1N80A1H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

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Datasheet: CS1N60C3H , CS1N60F , CS1N65A1 , CS1N65A3 , CS1N65B1 , CS1N65B3 , CS1N70A3H-G , CS1N80 , IRFP064N , CS1N80A3H , CS1N80A4H , CS20N03D , CS20N50A8H , CS20N50ANH , CS20N60 , CS20N60A8H , CS20N60ANH .

History: MCU80N06A | AONP36320 | JCS2N60CB | WM03DP50A | AONR32314 | 2SK293 | 2SK3651-01R

Keywords - CS1N80A1H MOSFET datasheet

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