Справочник MOSFET. CS1N80A1H

 

CS1N80A1H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS1N80A1H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.65 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4.6 ns
   Cossⓘ - Выходная емкость: 16 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 15 Ohm
   Тип корпуса: TO-92
 

 Аналог (замена) для CS1N80A1H

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS1N80A1H Datasheet (PDF)

 ..1. Size:536K  wuxi china
 cs1n80a1h.pdf pdf_icon

CS1N80A1H

Silicon N-Channel Power MOSFET R CS1N80 A1H General Description VDSS 800 V CS1N80 A1H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.1. Size:410K  wuxi china
 cs1n80a3h.pdf pdf_icon

CS1N80A1H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.2. Size:523K  wuxi china
 cs1n80a4h.pdf pdf_icon

CS1N80A1H

Silicon N-Channel Power MOSFET R CS1N80 A4H General Description VDSS 800 V CS1N80 A4H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.1. Size:410K  crhj
 cs1n80 a3h.pdf pdf_icon

CS1N80A1H

Silicon N-Channel Power MOSFET R CS1N80 A3H General Description VDSS 800 V CS1N80 A3H, the silicon N-channel Enhanced ID 1 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CS1N60C3H , CS1N60F , CS1N65A1 , CS1N65A3 , CS1N65B1 , CS1N65B3 , CS1N70A3H-G , CS1N80 , IRFP064N , CS1N80A3H , CS1N80A4H , CS20N03D , CS20N50A8H , CS20N50ANH , CS20N60 , CS20N60A8H , CS20N60ANH .

 

 
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