All MOSFET. CS20N90ANRD Datasheet

 

CS20N90ANRD MOSFET. Datasheet pdf. Equivalent

Type Designator: CS20N90ANRD

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 250 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 162 nC

Rise Time (tr): 42 nS

Drain-Source Capacitance (Cd): 504 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO-3P

CS20N90ANRD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS20N90ANRD Datasheet (PDF)

1.1. cs20n90anrd.pdf Size:395K _update_mosfet

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N90 ANRD General Description: VDSS 900 V CS20N90 ANRD, the silicon N-channel Enhanced ID 20 A PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.31 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.1. cs20n60a8h.pdf Size:434K _update_mosfet

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N60 A8H VDSS 600 V General Description: ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.2. cs20n60.pdf Size:109K _update_mosfet

CS20N90ANRD

CS20N60 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 300 W 线性降低系数 2.38 W/℃ 极 ID (VGS=10V,TC=25℃) 20 A 限 VGS ±20 V 值 Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.42 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 600 V RDS on) VGS=10V,ID=10A 0.32 0.46 Ω ( 电 VGS th) VDS=VGS,ID=0.25m

 5.3. cs20n03d.pdf Size:352K _update_mosfet

CS20N90ANRD
CS20N90ANRD

BRD20N03(CS20N03D) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途:用于低压电路如:汽车电路、DC/DC 转换、便携式产品的电源高效转换。 Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products. 特点:R 小,门电荷低,C 小,开关速度

5.4. cs20n50anh.pdf Size:363K _update_mosfet

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N50 ANH General Description: VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 5.5. cs20n50a8h.pdf Size:352K _update_mosfet

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N50 A8H General Description: VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.6. cs20n65fa9h.pdf Size:431K _update_mosfet

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N65F A9H VDSS 650 V General Description: ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.7. cs20n60anh.pdf Size:437K _update_mosfet

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N60 ANH VDSS 600 V General Description: ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.8. cs20n60fa9h.pdf Size:2676K _update_mosfet

CS20N90ANRD
CS20N90ANRD

CS20N60FA9H 600V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. TO-220F • ESD improved capability. 0.189(4.80) 0.173(4.40) • Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) • Low reverse transfer capacitances. 0.098(2.50) • 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code ■ Mechanical data G D S • Ep

5.9. hcs20nt60v.pdf Size:378K _update_mosfet

CS20N90ANRD
CS20N90ANRD

Apr 2014 BVDSS = 600 V RDS(on) typ = 0.17 HCS20NT60V ID = 20 A 600V N-Channel Super Junction MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Ope

5.10. cs20n50 a8h.pdf Size:352K _crhj

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N50 A8H General Description: VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

5.11. cs20n50 anh.pdf Size:363K _crhj

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N50 ANH General Description: VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.12. cs20n60 anh.pdf Size:437K _crhj

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N60 ANH VDSS 600 V General Description: ID 20 A CS20N60 ANH, the silicon N-channel Enhanced PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

5.13. cs20n60f a9h.pdf Size:431K _crhj

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N60F A9H VDSS 600 V General Description: ID 20 A CS20N60F A9H, the silicon N-channel Enhanced PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.14. cs20n65f a9h.pdf Size:431K _crhj

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N65F A9H VDSS 650 V General Description: ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

5.15. cs20n60 a8h.pdf Size:434K _crhj

CS20N90ANRD
CS20N90ANRD

Silicon N-Channel Power MOSFET R ○ CS20N60 A8H VDSS 600 V General Description: ID 20 A CS20N60 A8H, the silicon N-channel Enhanced PD(TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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