CS24N50 Specs and Replacement
Type Designator: CS24N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO-254
CS24N50 substitution
- MOSFET ⓘ Cross-Reference Search
CS24N50 datasheet
cs24n50 anhd.pdf
Silicon N-Channel Power MOSFET R CS24N50 ANHD General Description VDSS 500 V CS24N50 ANHD, the silicon N-channel Enhanced ID 24 A PD(TC=25 ) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
cs24n50.pdf
CS24N50 N PD TC=25 300 W 0.40 W/ ID VGS=10V,TC=25 24 A IDM 96 VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 500 V RDS on VGS=10V,ID=12A 0.23 VGS th VDS=VGS,ID=4mA 2.... See More ⇒
jcs24n50wh jcs24n50abh.pdf
N N- CHANNEL MOSFET R JCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
Detailed specifications: CS20N90ANRD, CS2110K1, CS220N03MD, CS220N04A8H, CS2232, CS2308, CS240, CS24N40A8, IRFB4227, CS250, CS27P06, CS2807, CS2837AND, CS2907Z, CS2N50A4, CS2N60A3H, CS2N60A4H
Keywords - CS24N50 MOSFET specs
CS24N50 cross reference
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