CS24N50 Datasheet and Replacement
Type Designator: CS24N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO-254
CS24N50 substitution
CS24N50 Datasheet (PDF)
cs24n50 anhd.pdf

Silicon N-Channel Power MOSFET R CS24N50 ANHD General Description VDSS 500 V CS24N50 ANHD, the silicon N-channel Enhanced ID 24 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs24n50.pdf

CS24N50 N PD TC=25 300 W 0.40 W/ ID VGS=10V,TC=25 24 A IDM 96 VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 500 V RDS on VGS=10V,ID=12A 0.23 VGS th VDS=VGS,ID=4mA 2.
jcs24n50wh-abh.pdf

N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS24N50H ;NSpe MAIN CHARACTERISTICS \ Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS (u l High efficienc
jcs24n50wh jcs24n50abh.pdf

N N- CHANNEL MOSFET RJCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
Datasheet: CS20N90ANRD , CS2110K1 , CS220N03MD , CS220N04A8H , CS2232 , CS2308 , CS240 , CS24N40A8 , AON6414A , CS250 , CS27P06 , CS2807 , CS2837AND , CS2907Z , CS2N50A4 , CS2N60A3H , CS2N60A4H .
Keywords - CS24N50 MOSFET datasheet
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History: AOD208 | UPA2719GR



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