CS24N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS24N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: TO-254
CS24N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS24N50 Datasheet (PDF)
cs24n50 anhd.pdf
Silicon N-Channel Power MOSFET R CS24N50 ANHD General Description VDSS 500 V CS24N50 ANHD, the silicon N-channel Enhanced ID 24 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
cs24n50.pdf
CS24N50 N PD TC=25 300 W 0.40 W/ ID VGS=10V,TC=25 24 A IDM 96 VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.42 /W BVDSS VGS=0V,ID=0.25mA 500 V RDS on VGS=10V,ID=12A 0.23 VGS th VDS=VGS,ID=4mA 2.
jcs24n50wh-abh.pdf
N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS24N50H ;NSpe MAIN CHARACTERISTICS \ Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS (u l High efficienc
jcs24n50wh jcs24n50abh.pdf
N N- CHANNEL MOSFET RJCS24N50H MAIN CHARACTERISTICS Package ID 24 A VDSS 500 V Rdson-max 0.19 @Vgs=10V Qg-typ 81nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
cs24n40f a9h.pdf
Silicon N-Channel Power MOSFET R CS24N40F A9H General Description VDSS 400 V CS24N40F A9H, the silicon N-channel Enhanced ID 24 A PD (TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
cs24n40 a8.pdf
Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs24n40a8.pdf
Silicon N-Channel Power MOSFET R CS24N40 A8 General Description VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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