All MOSFET. CS27P06 Datasheet

 

CS27P06 Datasheet and Replacement


   Type Designator: CS27P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO-263
 

 CS27P06 substitution

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CS27P06 Datasheet (PDF)

 ..1. Size:58K  china
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CS27P06

CS27P06P PD TC=25 120 W 0.8 W/ID VGS=-10V,TC=25 -27 AIDM -108 A VGS 25 VTjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=-0.25mA -60 VRDS on VGS=-10V,ID=-13.5A 0.055 0.07 VGS th VDS=VGS,ID=-0

Datasheet: CS220N03MD , CS220N04A8H , CS2232 , CS2308 , CS240 , CS24N40A8 , CS24N50 , CS250 , IRFB4227 , CS2807 , CS2837AND , CS2907Z , CS2N50A4 , CS2N60A3H , CS2N60A4H , CS2N60A4T , CS2N60A7H .

History: IPD800N06NG

Keywords - CS27P06 MOSFET datasheet

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