All MOSFET. CS3710B8 Datasheet

 

CS3710B8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS3710B8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-220AB

 CS3710B8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS3710B8 Datasheet (PDF)

 ..1. Size:971K  wuxi china
 cs3710b8.pdf

CS3710B8 CS3710B8

Silicon N-Channel Power MOSFET R CS3710 B8 General Description VDSS 100 V CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, ID 57 A PD(TC=25) 200 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 14 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:932K  blue-rocket-elect
 brcs3710ldp.pdf

CS3710B8 CS3710B8

BRCS3710LDP Rev.A Jun.-2021 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching. HF Product. / Applications DC/DC These devices are well suited for high effic

 8.2. Size:1109K  blue-rocket-elect
 brcs3710lra.pdf

CS3710B8 CS3710B8

BRCS3710LRA Rev.A Sep.-2022 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low On-Resistance, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/DC conve

 8.3. Size:774K  crhj
 cs3710 b8.pdf

CS3710B8 CS3710B8

Silicon N-Channel Power MOSFET R CS3710 B8 General Description VDSS 100 V CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, ID 57 A PD(TC=25) 200 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 14 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.4. Size:110K  china
 cs3710.pdf

CS3710B8

CS3710 N PD TC=25 200 W 1.3 W/ ID VGS=10V,TC=25 57 A ID VGS=10V,TC=100 40 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.75 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=28A 0.023 VGS

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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