All MOSFET. CS3710B8 Datasheet

 

CS3710B8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CS3710B8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 200 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 57 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 72 nC
   Rise Time (tr): 30 nS
   Drain-Source Capacitance (Cd): 620 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.023 Ohm
   Package: TO-220AB

 CS3710B8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS3710B8 Datasheet (PDF)

 ..1. Size:971K  wuxi china
cs3710b8.pdf

CS3710B8
CS3710B8

Silicon N-Channel Power MOSFET R CS3710 B8 General Description VDSS 100 V CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, ID 57 A PD(TC=25) 200 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 14 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.1. Size:774K  crhj
cs3710 b8.pdf

CS3710B8
CS3710B8

Silicon N-Channel Power MOSFET R CS3710 B8 General Description VDSS 100 V CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, ID 57 A PD(TC=25) 200 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 14 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.2. Size:110K  china
cs3710.pdf

CS3710B8

CS3710 N PD TC=25 200 W 1.3 W/ ID VGS=10V,TC=25 57 A ID VGS=10V,TC=100 40 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.75 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=28A 0.023 VGS

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF540N , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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