CS3710B8 MOSFET Datasheet: N-Ch, 100V, 57A. Full specification with pinout and replacement list

CS3710B8 Specs and Replacement

Type Designator: CS3710B8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 620 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-220AB

CS3710B8 substitution

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CS3710B8 datasheet

..1. Size:971K wuxi china
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Silicon N-Channel Power MOSFET R CS3710 B8 General Description VDSS 100 V CS3710 B8, the silicon N-channel Enhanced VDMOSFETs, ID 57 A PD(TC=25 ) 200 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 14 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

8.1. Size:932K blue-rocket-elect
brcs3710ldp.pdf pdf_icon

BRCS3710LDP Rev.A Jun.-2021 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features Low On-Resistance, fast switching. HF Product. / Applications DC/DC These devices are well suited for high effic... See More ⇒

8.2. Size:1109K blue-rocket-elect
brcs3710lra.pdf pdf_icon

BRCS3710LRA Rev.A Sep.-2022 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low On-Resistance, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/DC conve... See More ⇒

8.3. Size:774K crhj
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