CS38N30AN Specs and Replacement

Type Designator: CS38N30AN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 38.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 165 nS

Cossⓘ - Output Capacitance: 726 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO-3P

CS38N30AN substitution

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CS38N30AN datasheet

 ..1. Size:370K  wuxi china
 cs38n30an.pdf pdf_icon

CS38N30AN

Silicon N-Channel Power MOSFET R CS38N30 AN General Description VDSS 300 V CS38N30 AN, the silicon N-channel Enhanced ID 38.5 A PD (TC=25 ) 290 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 7.1. Size:370K  crhj
 cs38n30 an.pdf pdf_icon

CS38N30AN

Silicon N-Channel Power MOSFET R CS38N30 AN General Description VDSS 300 V CS38N30 AN, the silicon N-channel Enhanced ID 38.5 A PD (TC=25 ) 290 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒

 9.1. Size:112K  china
 cs38n20d.pdf pdf_icon

CS38N30AN

CS38N20D N PD TC=25 320 W 2.1 W/ ID VGS=10V,TC=25 44 A ID VGS=10V,TC=100 32 A IDM 180 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.47 /W RthJA 62 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VG... See More ⇒

Detailed specifications: CS3410B3, CS34P10, CS360, CS36P15, CS3710, CS3710B8, CS37N5, CS38N20D, TK10A60D, CS3912, CS3N50B3HY, CS3N50B4HY, CS3N60A3, CS3N65A4H-G, CS3N70A3H-G, CS3N80A3, CS3N80A4

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.