All MOSFET. CS38N30AN Datasheet

 

CS38N30AN Datasheet and Replacement


   Type Designator: CS38N30AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 38.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 123 nC
   tr ⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 726 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-3P
 

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CS38N30AN Datasheet (PDF)

 ..1. Size:370K  wuxi china
 cs38n30an.pdf pdf_icon

CS38N30AN

Silicon N-Channel Power MOSFET R CS38N30 AN General Description VDSS 300 V CS38N30 AN, the silicon N-channel Enhanced ID 38.5 A PD (TC=25) 290 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.1. Size:370K  crhj
 cs38n30 an.pdf pdf_icon

CS38N30AN

Silicon N-Channel Power MOSFET R CS38N30 AN General Description VDSS 300 V CS38N30 AN, the silicon N-channel Enhanced ID 38.5 A PD (TC=25) 290 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.045 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.1. Size:112K  china
 cs38n20d.pdf pdf_icon

CS38N30AN

CS38N20D N PD TC=25 320 W 2.1 W/ ID VGS=10V,TC=25 44 A ID VGS=10V,TC=100 32 A IDM 180 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.47 /W RthJA 62 /W BVDSS VGS=0V,ID=0.25 mA 200 V RDS on VG

Datasheet: CS3410B3 , CS34P10 , CS360 , CS36P15 , CS3710 , CS3710B8 , CS37N5 , CS38N20D , IRFZ24N , CS3912 , CS3N50B3HY , CS3N50B4HY , CS3N60A3 , CS3N65A4H-G , CS3N70A3H-G , CS3N80A3 , CS3N80A4 .

History: SI5456DU | 7N80

Keywords - CS38N30AN MOSFET datasheet

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