CS3912 Specs and Replacement

Type Designator: CS3912

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: SO-8

CS3912 substitution

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CS3912 datasheet

 ..1. Size:105K  china
 cs3912.pdf pdf_icon

CS3912

CS3912 N PD TC=25 2 W ID VGS=10V,TC=25 3 A IDM 20 A VGS 20 V Tjm +175 Tstg -55 +150 RthJA 78 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=3A 0.125 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs VDS=... See More ⇒

 9.1. Size:1359K  1
 jcs3910r.pdf pdf_icon

CS3912

N R N-CHANNEL MOSFET JCS3910 Package MAIN CHARACTERISTICS ID 16A VDSS 100 V Rdson-max 115 m @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒

 9.2. Size:1083K  jilin sino
 jcs3910v jcs3910r jcs3910f jcs3910c.pdf pdf_icon

CS3912

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 9.3. Size:698K  jilin sino
 jcs3910v jcs3910r jcs3910f.pdf pdf_icon

CS3912

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Detailed specifications: CS34P10, CS360, CS36P15, CS3710, CS3710B8, CS37N5, CS38N20D, CS38N30AN, AO4407, CS3N50B3HY, CS3N50B4HY, CS3N60A3, CS3N65A4H-G, CS3N70A3H-G, CS3N80A3, CS3N80A4, CS3N80A8

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs