CS3912 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS3912
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: SO-8
CS3912 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS3912 Datasheet (PDF)
cs3912.pdf
CS3912 N PD TC=25 2 W ID VGS=10V,TC=25 3 A IDM 20 A VGS 20 V Tjm +175 Tstg -55 +150 RthJA 78 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=3A 0.125 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V gfs VDS=
jcs3910r.pdf
N R N-CHANNEL MOSFET JCS3910 Package MAIN CHARACTERISTICS ID 16A VDSS 100 V Rdson-max 115 m @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
jcs3910v jcs3910r jcs3910f jcs3910c.pdf
N RN-CHANNEL MOSFET JCS3910 Package MAIN CHARACTERISTICS ID 16A VDSS 100 V Rdson-max 115 m @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
jcs3910v jcs3910r jcs3910f.pdf
N RN-CHANNEL MOSFET JCS3910 Package MAIN CHARACTERISTICS ID 16A VDSS 100 V Rdson-max 115 m @Vgs=10V Qg-typ 18.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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