CS3N50B3HY MOSFET Datasheet: N-Ch, 500V, 3A. Full specification with pinout and replacement list

CS3N50B3HY Specs and Replacement

Type Designator: CS3N50B3HY

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-251

CS3N50B3HY substitution

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CS3N50B3HY datasheet

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Silicon N-Channel Power MOSFET R CS3N50 B3HY General Description VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25 ) 35 W RDS(ON)Typ 2.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

7.1. Size:249K wuxi china
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Silicon N-Channel Power MOSFET R CS3N50 B4HY General Description VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

8.1. Size:250K crhj
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8.2. Size:230K crhj
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Silicon N-Channel Power MOSFET R CS3N50 B4 General Description VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒