CS3N50B3HY. Аналоги и основные параметры

Наименование производителя: CS3N50B3HY

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 11 ns

Cossⓘ - Выходная емкость: 37 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm

Тип корпуса: TO-251

Аналог (замена) для CS3N50B3HY

- подборⓘ MOSFET транзистора по параметрам

 

CS3N50B3HY даташит

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CS3N50B3HY

Silicon N-Channel Power MOSFET R CS3N50 B3HY General Description VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25 ) 35 W RDS(ON)Typ 2.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

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 cs3n50b4hy.pdf pdf_icon

CS3N50B3HY

Silicon N-Channel Power MOSFET R CS3N50 B4HY General Description VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.1. Size:250K  crhj
 cs3n50 b4hy.pdf pdf_icon

CS3N50B3HY

Silicon N-Channel Power MOSFET R CS3N50 B4HY General Description VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.2. Size:230K  crhj
 cs3n50 b4.pdf pdf_icon

CS3N50B3HY

Silicon N-Channel Power MOSFET R CS3N50 B4 General Description VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3 A PD (TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

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