All MOSFET. CS3N50B4HY Datasheet

 

CS3N50B4HY Datasheet and Replacement


   Type Designator: CS3N50B4HY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-252
 

 CS3N50B4HY substitution

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CS3N50B4HY Datasheet (PDF)

 ..1. Size:249K  wuxi china
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CS3N50B4HY

Silicon N-Channel Power MOSFET R CS3N50 B4HY General Description VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:200K  wuxi china
 cs3n50b3hy.pdf pdf_icon

CS3N50B4HY

Silicon N-Channel Power MOSFET R CS3N50 B3HY General Description VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25) 35 W RDS(ON)Typ 2.4 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.1. Size:250K  crhj
 cs3n50 b4hy.pdf pdf_icon

CS3N50B4HY

Silicon N-Channel Power MOSFET R CS3N50 B4HY General Description VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.2. Size:230K  crhj
 cs3n50 b4.pdf pdf_icon

CS3N50B4HY

Silicon N-Channel Power MOSFET R CS3N50 B4 General Description VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

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Datasheet: CS36P15 , CS3710 , CS3710B8 , CS37N5 , CS38N20D , CS38N30AN , CS3912 , CS3N50B3HY , 4N60 , CS3N60A3 , CS3N65A4H-G , CS3N70A3H-G , CS3N80A3 , CS3N80A4 , CS3N80A8 , CS3N80FA9 , CS3N90A3H .

History: BUK9M20-40H

Keywords - CS3N50B4HY MOSFET datasheet

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 CS3N50B4HY replacement

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