CS3N90A4H Datasheet and Replacement. Cross Reference Search

CS3N90A4H Datasheet (PDF)

..1. Size:416K wuxi china
cs3n90a4h.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

7.1. Size:875K wuxi china
cs3n90a3h1-g.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS3N90 A3H1-G General Description VDSS 900 V CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

7.2. Size:631K wuxi china
cs3n90a3h.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

7.3. Size:496K wuxi china
cs3n90a8.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

Datasheet: CS3N60A3 , CS3N65A4H-G , CS3N70A3H-G , CS3N80A3 , CS3N80A4 , CS3N80A8 , CS3N80FA9 , CS3N90A3H , 75N75 , CS3N90A8 , CS3N90FA9H , CS3R50A3 , CS3R50FA9 , CS40N06 , CS4482DY , CS4486 , CS47N60 .