Справочник MOSFET. CS3N90A4H

 

CS3N90A4H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CS3N90A4H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 44 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5.5 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для CS3N90A4H

   - подбор ⓘ MOSFET транзистора по параметрам

 

CS3N90A4H Datasheet (PDF)

 ..1. Size:416K  wuxi china
cs3n90a4h.pdfpdf_icon

CS3N90A4H

Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.1. Size:875K  wuxi china
cs3n90a3h1-g.pdfpdf_icon

CS3N90A4H

Silicon N-Channel Power MOSFET R CS3N90 A3H1-G General Description VDSS 900 V CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.2. Size:631K  wuxi china
cs3n90a3h.pdfpdf_icon

CS3N90A4H

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 7.3. Size:496K  wuxi china
cs3n90a8.pdfpdf_icon

CS3N90A4H

Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

Другие MOSFET... CS3N60A3 , CS3N65A4H-G , CS3N70A3H-G , CS3N80A3 , CS3N80A4 , CS3N80A8 , CS3N80FA9 , CS3N90A3H , 75N75 , CS3N90A8 , CS3N90FA9H , CS3R50A3 , CS3R50FA9 , CS40N06 , CS4482DY , CS4486 , CS47N60 .

History: CS3205 | SFF80N20PUB | APT47N65BC3

 

 
Back to Top

 


 
.