CS4486 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS4486
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 5.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SO-8
CS4486 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4486 Datasheet (PDF)
cs4486.pdf
LJ2015-40CS4486 N ( P T =25 1.8 WD C 2.0 W/I V =10V,T =25 5.4 AD GS CI V =10V,T =85 4.2 AD GS CI 40 ADMV 20 VGST +150 jmT -55 +175 stg R
brcs4484sc.pdf
BRCS4484SC Rev.E Nov.-2019 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features R DS(ON)Uses advanced trench technology to provide excellent RDS(ON) with low gate charge. H
cs4482dy.pdf
LJ2015-29CS4482DY N ( P T =25 2.5 WD A 0.02 W/I T =25 4.6 AD AI 40 ADMV 20 V GST -55 +150 jmT -55 +150 stg R 50 /WthJABV V =0V,I =0.25mA 100 VDSS GS
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
