CS48N88 Specs and Replacement
Type Designator: CS48N88
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 92 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 515 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: TO-220
CS48N88 substitution
- MOSFET ⓘ Cross-Reference Search
CS48N88 datasheet
cs48n88.pdf
CS48N88 Pb CS48N88 Pb Free Plating Product 70V,92A N-Channel Trench Process Power MOSFET General Description The CS48N88 is N-channel MOS Field Effect Transistor CS48N88 designed for high current switching applications. Rugged EAS (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D... See More ⇒
cs48n78.pdf
CS48N78 Pb CS48N78 Pb Free Plating Product 70V,80A N-Channel Trench Process Power MOSFET General Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78 designed for high current switching applications. Rugged EAS (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D... See More ⇒
cs48n18.pdf
CS48N18 Pb CS48N18 Pb Free Plating Product 70V,158A N-Channel Trench Process Power MOSFET General Description CS48N18 The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink) designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea... See More ⇒
Detailed specifications: CS40N06, CS4482DY, CS4486, CS47N60, CS48N18, CS48N75, CS48N78, CS48N80, IRF1405, CS4905S, CS4J60A3-G, CS4J60B3-G, CS4N60, CS4N60A3HD, CS4N60A3TDY, CS4N60A4HD, CS4N60A4TDY
Keywords - CS48N88 MOSFET specs
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