CS48N88 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: CS48N88
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 120 W
Предельно допустимое напряжение сток-исток |Uds|: 70 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 92 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 89.3 nC
Время нарастания (tr): 15 ns
Выходная емкость (Cd): 515 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0064 Ohm
Тип корпуса: TO-220
CS48N88 Datasheet (PDF)
cs48n88.pdf
CS48N88 PbCS48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The CS48N88 is N-channel MOS Field Effect Transistor CS48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D
cs48n80.pdf
CS48N80 PbCS48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS CS48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features
cs48n78.pdf
CS48N78 PbCS48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D
cs48n18.pdf
CS48N18 PbCS48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description CS48N18The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea
cs48n75.pdf
CS48N75 PbCS48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor CS48N75designed for high current switching applications. Rugged EAS CS48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
