CS4J60A3-G Specs and Replacement

Type Designator: CS4J60A3-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 181 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-251

CS4J60A3-G substitution

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CS4J60A3-G datasheet

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CS4J60A3-G

Silicon N-Channel Power MOSFET R CS4J60 A3-G General Description VDSS 600 V CS4J60 A3-G, the silicon N-channel Enhanced MOSFETs, is ID 4 A PD(TC=25 ) 62 W obtained by the super junction technology which reduces the RDS(ON)Typ 1.78 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc... See More ⇒

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CS4J60A3-G

Silicon N-Channel Power MOSFET R CS6J70 A3-G1-1 General Description VDSS 600 V CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is ID 4 A PD(TC=25 ) 45 W obtained by the super junction technology which reduces the RDS(ON)Typ 2.2 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒

Detailed specifications: CS4486, CS47N60, CS48N18, CS48N75, CS48N78, CS48N80, CS48N88, CS4905S, IRFZ48N, CS4J60B3-G, CS4N60, CS4N60A3HD, CS4N60A3TDY, CS4N60A4HD, CS4N60A4TDY, CS4N60A7HD, CS4N60A8HD

Keywords - CS4J60A3-G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.