CS4J60B3-G MOSFET. Datasheet pdf. Equivalent
Type Designator: CS4J60B3-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11.2 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 128 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-251
CS4J60B3-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS4J60B3-G Datasheet (PDF)
cs4j60b3-g.pdf
Silicon N-Channel Power MOSFET R CS6J70 A3-G1-1 General Description VDSS 600 V CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is ID 4 A PD(TC=25) 45 W obtained by the super junction technology which reduces the RDS(ON)Typ 2.2 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs4j60a3-g.pdf
Silicon N-Channel Power MOSFET R CS4J60 A3-G General Description VDSS 600 V CS4J60 A3-G, the silicon N-channel Enhanced MOSFETs, is ID 4 A PD(TC=25) 62 W obtained by the super junction technology which reduces the RDS(ON)Typ 1.78 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
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