All MOSFET. CS4J60B3-G Datasheet

 

CS4J60B3-G Datasheet and Replacement


   Type Designator: CS4J60B3-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11.2 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-251
 

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CS4J60B3-G Datasheet (PDF)

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CS4J60B3-G

Silicon N-Channel Power MOSFET R CS6J70 A3-G1-1 General Description VDSS 600 V CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is ID 4 A PD(TC=25) 45 W obtained by the super junction technology which reduces the RDS(ON)Typ 2.2 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 8.1. Size:347K  wuxi china
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CS4J60B3-G

Silicon N-Channel Power MOSFET R CS4J60 A3-G General Description VDSS 600 V CS4J60 A3-G, the silicon N-channel Enhanced MOSFETs, is ID 4 A PD(TC=25) 62 W obtained by the super junction technology which reduces the RDS(ON)Typ 1.78 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

Datasheet: CS47N60 , CS48N18 , CS48N75 , CS48N78 , CS48N80 , CS48N88 , CS4905S , CS4J60A3-G , STP65NF06 , CS4N60 , CS4N60A3HD , CS4N60A3TDY , CS4N60A4HD , CS4N60A4TDY , CS4N60A7HD , CS4N60A8HD , CS4N60ARRD .

History: 6N60AF

Keywords - CS4J60B3-G MOSFET datasheet

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