CS4J60B3-G Specs and Replacement
Type Designator: CS4J60B3-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 128 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-251
CS4J60B3-G substitution
- MOSFET ⓘ Cross-Reference Search
CS4J60B3-G datasheet
cs4j60b3-g.pdf
Silicon N-Channel Power MOSFET R CS6J70 A3-G1-1 General Description VDSS 600 V CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is ID 4 A PD(TC=25 ) 45 W obtained by the super junction technology which reduces the RDS(ON)Typ 2.2 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi... See More ⇒
cs4j60a3-g.pdf
Silicon N-Channel Power MOSFET R CS4J60 A3-G General Description VDSS 600 V CS4J60 A3-G, the silicon N-channel Enhanced MOSFETs, is ID 4 A PD(TC=25 ) 62 W obtained by the super junction technology which reduces the RDS(ON)Typ 1.78 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc... See More ⇒
Detailed specifications: CS47N60, CS48N18, CS48N75, CS48N78, CS48N80, CS48N88, CS4905S, CS4J60A3-G, IRFZ46N, CS4N60, CS4N60A3HD, CS4N60A3TDY, CS4N60A4HD, CS4N60A4TDY, CS4N60A7HD, CS4N60A8HD, CS4N60ARRD
Keywords - CS4J60B3-G MOSFET specs
CS4J60B3-G cross reference
CS4J60B3-G equivalent finder
CS4J60B3-G pdf lookup
CS4J60B3-G substitution
CS4J60B3-G replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
