CS4N65A3TDY Datasheet and Replacement

Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto