CS4N65A3TDY Datasheet. Specs and Replacement

Type Designator: CS4N65A3TDY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-251

  📄📄 Copy 

CS4N65A3TDY substitution

- MOSFET ⓘ Cross-Reference Search

 

CS4N65A3TDY datasheet

 ..1. Size:237K  wuxi china
 cs4n65a3tdy.pdf pdf_icon

CS4N65A3TDY

Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 6.1. Size:231K  wuxi china
 cs4n65a3hd.pdf pdf_icon

CS4N65A3TDY

Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

 6.2. Size:353K  wuxi china
 cs4n65a3hdy.pdf pdf_icon

CS4N65A3TDY

Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

 6.3. Size:220K  wuxi china
 cs4n65a3r.pdf pdf_icon

CS4N65A3TDY

Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒

SHOW MORE

Detailed specifications: CS4N60A7HD, CS4N60A8HD, CS4N60ARRD, CS4N60F, CS4N60FA9HD, CS4N60FA9TDY, CS4N65A3HD, CS4N65A3HDY, 2SK2842, CS4N65A4HDY, CS4N65A4TDY, CS4N65A8HD, CS4N65F, CS4N70ARHD, CS4N70FA9D, CS50N06, CS50N06D

Keywords - CS4N65A3TDY MOSFET specs

 CS4N65A3TDY cross reference

 CS4N65A3TDY equivalent finder

 CS4N65A3TDY pdf lookup

 CS4N65A3TDY substitution

 CS4N65A3TDY replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility