CS4N65A4TDY Datasheet. Specs and Replacement
Type Designator: CS4N65A4TDY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ -
Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO-252
- MOSFET ⓘ Cross-Reference Search
CS4N65A4TDY datasheet
..1. Size:353K wuxi china
cs4n65a4tdy.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A4TDY General Description VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒
6.1. Size:596K wuxi china
cs4n65a4hdy.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A4HDY General Description VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
6.2. Size:226K wuxi china
cs4n65a4r.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A4R General Description VDSS 650 V CS4N65 A4R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
7.1. Size:677K blue-rocket-elect
brcs4n65aa.pdf 
BRCS4N65AA Rev.D Nov.-2017 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package.. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici... See More ⇒
7.2. Size:231K wuxi china
cs4n65a3hd.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A3HD General Description VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
7.3. Size:353K wuxi china
cs4n65a3hdy.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A3HDY General Description VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
7.4. Size:220K wuxi china
cs4n65a3r.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A3R General Description VDSS 650 V CS4N65 A3R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s... See More ⇒
7.5. Size:226K wuxi china
cs4n65a8hd.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A8HD 0General Description VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
7.6. Size:324K wuxi china
cs4n65a3hd1-g.pdf 
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N65 A3HD1-G General Description VDSS 650 V CS4N65 A3HD1-G, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto... See More ⇒
7.7. Size:237K wuxi china
cs4n65a3tdy.pdf 
Silicon N-Channel Power MOSFET R CS4N65 A3TDY General Description VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
Detailed specifications: CS4N60ARRD, CS4N60F, CS4N60FA9HD, CS4N60FA9TDY, CS4N65A3HD, CS4N65A3HDY, CS4N65A3TDY, CS4N65A4HDY, IRFZ44N, CS4N65A8HD, CS4N65F, CS4N70ARHD, CS4N70FA9D, CS50N06, CS50N06D, CS50N80, CS5103
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.