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CS4N65A4TDY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: CS4N65A4TDY

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 75 W

Предельно допустимое напряжение сток-исток (Uds): 650 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 4 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 13 nC

Время нарастания (tr): 22 ns

Выходная емкость (Cd): 50 pf

Сопротивление сток-исток открытого транзистора (Rds): 2.8 Ohm

Тип корпуса: TO-252

Аналог (замена) для CS4N65A4TDY

 

CS4N65A4TDY Datasheet (PDF)

1.1. cs4n65a4tdy.pdf Size:353K _update_mosfet

CS4N65A4TDY CS4N65A4TDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A4TDY General Description： VDSS 650 V CS4N65 A4TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

2.1. cs4n65a4hdy.pdf Size:596K _update_mosfet

CS4N65A4TDY CS4N65A4TDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A4HDY General Description： VDSS 650 V CS4N65 A4HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 3.1. cs4n65a3hdy.pdf Size:353K _update_mosfet

CS4N65A4TDY CS4N65A4TDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A3HDY General Description： VDSS 650 V CS4N65 A3HDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

3.2. cs4n65a8hd.pdf Size:345K _update_mosfet

CS4N65A4TDY CS4N65A4TDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A8HD 0General Description： VDSS 650 V CS4N65 A8HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 3.3. cs4n65a3tdy.pdf Size:237K _update_mosfet

CS4N65A4TDY CS4N65A4TDY

Silicon N-Channel Power MOSFET R ○ CS4N65 A3TDY General Description： VDSS 650 V CS4N65 A3TDY, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.3 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

3.4. cs4n65a3hd.pdf Size:354K _update_mosfet

CS4N65A4TDY CS4N65A4TDY

Silicon N-Channel Power MOSFET ○ R CS4N65 A3HD General Description： VDSS 650 V CS4N65 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25℃) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

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