CS5N60F Specs and Replacement

Type Designator: CS5N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-220F

CS5N60F substitution

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CS5N60F datasheet

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CS5N60F

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 0.1. Size:897K  jilin sino
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CS5N60F

N R N-CHANNEL MOSFET JCS5N60C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V Rdson Vgs=10V 2.5 Qg 9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES ... See More ⇒

 0.2. Size:976K  jilin sino
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CS5N60F

N R N-CHANNEL MOSFET JCS5N60B Package MAIN CHARACTERISTICS ID 5.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 13.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su... See More ⇒

 0.3. Size:333K  wuxi china
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CS5N60F

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60F A9HD General Description VDSS 600 V CS5N60F A9HD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ... See More ⇒

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Detailed specifications: CS55N10, CS5630, CS5M3710, CS5M4905, CS5M5210, CS5N50, CS5N5210, CS5N60D, IRFP250N, CS5N65A3, CS5N65A4, CS5N65A7H, CS5N65A8H, CS5N65FA9H, CS5N70A4, CS5N70FA9, CS5N90

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